Changes

When a P-Junction and an N-junction are placed next to each other, a [[P-N Junction]] is created and a flow of electric current occurs.  The freed electrons from the n-junction side move toward the holes in the p-junction section.  This creates the needed electric field to move the electrons to external applications.

When a P-Junction and an N-junction are placed next to each other, a [[P-N Junction]] is created and a flow of electric current occurs.  The freed electrons from the n-junction side move toward the holes in the p-junction section.  This creates the needed electric field to move the electrons to external applications.

==Creation==

==Creation of the Gallium Arsenide Crystal==

There are many ways to create a GaAs solar or photo voltaic cell.  First the GaAs crystal must be created.  Without this, the solar cell will not be able to function.  In this section some methods to create GaAs crystals will be discussed.  Three effective means of growing crystals include: [[Molecular Beam Epitaxy]], [[Metalorganic Vapour Phase Epitaxy]], and Electrochemical Deposition (or [[Electroplating]]).

There are many ways to create a GaAs solar or photo voltaic cell.  First the GaAs crystal must be created.  Without this, the solar cell will not be able to function.  In this section some methods to create GaAs crystals will be discussed.  Three effective means of growing crystals include: [[Molecular Beam Epitaxy]], [[Metalorganic Vapour Phase Epitaxy]], and Electrochemical Deposition (or [[Electroplating]]).

In a recent article in the magazine ''Electronic News'' [[gallium arsenide]] was tested on a [[germanium]] [[substrate]].  The resulting efficiency level was 24.9% for a single junction.  This although not amazingly impressive, is high enough to warrant more investigation for full spectrum light capture.  The test cell, which was .25 centimeters², had an open circuit voltage of 999mV, a short circuit current of 29.7 square mA/cm, and a fill factor of 83.2%.

In a recent article in the magazine ''Electronic News'' [[gallium arsenide]] was tested on a [[germanium]] [[substrate]].  The resulting efficiency level was 24.9% for a single junction.  This although not amazingly impressive, is high enough to warrant more investigation for full spectrum light capture.  The test cell, which was .25 centimeters², had an open circuit voltage of 999mV, a short circuit current of 29.7 square mA/cm, and a fill factor of 83.2%.

==Future Development==

==Future Development==