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→‎Gallium Arsenide: spelling and wiki-links
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===Gallium Arsenide===
 
===Gallium Arsenide===
To start off with the basics gallium arsenide is composed of 2 base elements gallium and arsenic.  When these two individual elements bind together, they form the aforementioned compound, which displays many interesting characteristics.  Gallium arsenide is a [[semiconductor]] with a greater  saturated electron velocity and [[electron mobility]] than that of silicon.  A semiconductor is a material that has [[electrical conductivity]] between between an insulator and a conductor; it may vary its ability to conduct [[electricity]] when it is cool versus when it is hot.  This makes it very useful in many applications.  Another novel quality to gallium arsenide is that it has a [[direct band gap]].  This it a quality that denotes a compound that can emit light efficiently.     
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To start off with the basics : gallium arsenide is composed of 2 base elements; gallium and arsenic.  When these two individual elements bind together, they form the aforementioned compound, which displays many interesting characteristics.  Gallium arsenide is a [[semiconductor]] with a greater  saturated electron velocity and [[electron mobility]] than that of {{wp|silicon}}.  A semiconductor is a material that has [[electrical conductivity]] between an insulator and a conductor; it may vary its ability to conduct [[electricity]] when it is cool versus when it is hot.  This makes it very useful in many applications.  Another novel quality to gallium arsenide is that it has a [[direct band gap]].  This is a quality that denotes a compound that can emit light efficiently.     
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For example due to the fact that it has a greater electron mobility than silicon it can be used in different ways that silicon cannot. Transistors made of this material can run at frequencies over 250 GHz. These transistors produce less noise when operating at the same high frequencies as their silicon counterparts.  Gallium arsenide also has a higher [[breakdown voltage]]. Breakdown voltage is the minimum (reverse) voltage applied that can cause to make a part of the component electrically conductive (or conduct in reverse).
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For example due to the fact that it has a greater electron mobility than silicon it can be used in different ways that silicon cannot. {{wp|Transistors}} made of this material can run at frequencies over 250 GHz. These transistors produce less noise when operating at the same high frequencies as their silicon counterparts.  Gallium arsenide also has a higher [[breakdown voltage]]. Breakdown voltage is the minimum (reverse) voltage applied that can cause to make a part of the component electrically conductive (or conduct in reverse).
    
Because of these factors, gallium arsenide has been a good candidate for many electrical applications ranging from the common to the extraordinary.  Some of these include cellular telephones, satellites and satellite communication, micro and nano scale semiconductors, radar systems, and even nano based solar power.
 
Because of these factors, gallium arsenide has been a good candidate for many electrical applications ranging from the common to the extraordinary.  Some of these include cellular telephones, satellites and satellite communication, micro and nano scale semiconductors, radar systems, and even nano based solar power.
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