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InGaN based Light Emitting Diodes (LED) literature review: Revision history
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→This page describes selected literature available on InGaN based LED and LASER devices.
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/* InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si SubstrateA. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Japanese
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/* InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si SubstrateA. Kikuchi, M. Kawai, M. Tada, and K. Kishino, “InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate,” Japanese
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→CW lasing of current injection blue GaN-based vertical cavity surface emitting laser
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→InGaN‐Based Nanorod Array Light Emitting DiodesH. Kim, Y. H. Cho, D. Y. Kim, T. W. Kang, and K. S. Chung, “InGaN‐Based Nanorod Array Light Emitting Diodes,” AIP Conference Proceedings, vol. 772, no. 1, pp. 1515-1516, Jun. 2005
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→Stimulated emission from GaN nanocolumnsA. Kikuchi, K. Yamano, M. Tada, and K. Kishino, “Stimulated emission from GaN nanocolumns,” physica status solidi (b), vol. 241, no. 12, pp. 2754-2758, Oct. 2004
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→Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etchingChiu, C.H. et al., 2007. Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching. Nanotechnology, 18(33), p.335706
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/* InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen annealOliver, R.A. et al., 2003. InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal. Applied Physics Le
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→Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etchingChiu, C.H. et al., 2007. Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching. Nanotechnology, 18(33), p.335706
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→===[http://iopscience.iop.org/0957-4484/18/44/445201/ Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands<ref name
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/* Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk SubstratesFunato, M. et al., 2006. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates. Japanese Journal of Applied Ph
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/* Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk SubstratesFunato, M. et al., 2006. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates. Japanese Journal of Applied Ph
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→GaN-based light-emitting diodes with SiONx on sidewallsZhu, Y. et al., 2007. GaN-based light-emitting diodes with SiONx on sidewalls. Semiconductor Science and Technology, 22, pp.659-662
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→Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-offWong, W.S. et al., 1999. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off. Applied Physics Letters, 75, p.1360
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/* Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopyKawakami, Y. et al., 2007. Efficient green emission from (1122) InGaN∕GaN quantum wells on GaN microfacets probed by
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/* Efficient green emission from (11-22) InGaN/GaN quantum wells on GaN microfacets probed by scanning near field optical microscopyKawakami, Y. et al., 2007. Efficient green emission from (1122) InGaN∕GaN quantum wells on GaN microfacets probed by
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→===[http://onlinelibrary.wiley.com/doi/10.1002/pssa.200674834/abstract Blue–green–red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy<ref name
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→===[http://pubs.acs.org/doi/abs/10.1021/nl101027x Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy<ref name
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/* Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk SubstratesFunato, M. et al., 2006. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates. Japanese Journal of Applied Ph
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/* Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk SubstratesFunato, M. et al., 2006. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates. Japanese Journal of Applied Ph
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→High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
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→Light-emitting diode extraction efficiencyBoroditsky, M. & Yablonovitch, E., 1997. Light-emitting diode extraction efficiency. Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series, 3002, pp.119-122.
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