This page is a collaborative project in L3999 to probe the potential for 3-D printed scientific tools to be used in the cleanroom.
Micronova Cleanroom Finger[edit | edit source]
1[edit | edit source]
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2[edit | edit source]
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3[edit | edit source]
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4[edit | edit source]
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5[edit | edit source]
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6[edit | edit source]
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Finger 7[edit | edit source]
ISO level[edit | edit source]
- 5
Processing equipment: Wet benches, oxidation furnaces[edit | edit source]
- Wet Bench RCA 1, RCA 2
- Oxidation furnaces
Most Common Chemicals used[edit | edit source]
- RCA1: DI H2O, NH3 (25% solution), H2O2, temperature 80°C
- RCA2: DI H2O, HCl (37% solution), H2O2, temperature 80°C
- DI H2O
- HF solution up to 5%
Requirements[edit | edit source]
- RCA1 + RCA2 + HF dip is required before placing samples in oxidation furnaces
Finger 8[edit | edit source]
ISO level[edit | edit source]
- 4
Processing equipment: Photoresist application tools[edit | edit source]
- Prime Oven + HMDS
- Spinner BLE
- Oven 90°C
- Mask aligner + UV exposure
- Oven 120°C
- Wet Bench: Development
- Wet Bench: Oxide Etch
Most Common Chemicals used[edit | edit source]
- HMDS primer
- AZ5214E Photoresist
- Acetone (in ultrasonic bath)
- Acetone
- Isopropanol
- DI H2O
Finger 9[edit | edit source]
ISO level[edit | edit source]
- 5
Processing equipment: ALD[edit | edit source]
- ALD-1: Beneq TFS-500 (plasma capability)
- ALD-2: Beneq TFS-500
- ALD-3: Picosun SUNALE R-150B (plasma capability, primarily for nitride deposition)
Most Common Chemicals used[edit | edit source]
- H2O
- TMA
- TiCl4
- DEZn (ALD-1 only)
- NH3
- O2
- O3
- Carrier gas N2 or Ar (ALD-1 only)
Process conditions[edit | edit source]
- Deposition temperature 20-450°C
- Maximum wafer size < 200 mm. Possibility to coat samples with up to 15 mm thickness with a lifting ring for the reactor
- Allowed materials: Si, GaN, InP, GaAs, polymers (SU-8, AZ-resists, PMMA), Al, Cr, Ge, Ti, glass
- Forbidden materials: Noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Dc, Pb, Zn), silicones, other cleanroom incompatible materials
- ALD-3: 80-500°C, max. 200 mm wafer. Only IC clean materials. Possibility to coat non-IC materials with a separate holder.
Processing equipment: ICP-RIE etcher[edit | edit source]
- ICP-RIE: Oxford Plasmalab 100
Inductively coupled plasma etcher for etching silicon, compound semiconductors and polymers.
Most Common Chemicals used[edit | edit source]
- BCl3
- Cl2
- SiCl4
- SF6
- H2
- O2/N2/Ar
Process conditions[edit | edit source]
- ICP source 2kW, CCP source 300W
- Temperature range: -150°C to +400°C
- Si etch rate 2-3 um/min
- 100 mm Si wafer
- Allowed materials: Si, GaN, GaAs, photoresists, Al, Cr, Ge, Ti
- Forbidden materials: Glass, noble metals (Au, Ag, Pt, Cu, Pd), heavy metals (Dc, Pb, Zn), silicones
10[edit | edit source]
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11[edit | edit source]
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12[edit | edit source]
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13[edit | edit source]
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Commercial 3-D Printing Filaments[edit | edit source]
Look here first:
Tests for Clean Room Compatibility[edit | edit source]
- Determination of particulate generation
- Determination of acceptability in chemical processing
Filament type, print temp, off gas, chemical compatibility[edit | edit source]
You can get outgassing information for TML/CVCM/WVR at https://outgassing.nasa.gov/
- Total Mass Loss (TML) : The mass loss of the sample, determined from the weights before and after the 398 K exposure, expressed as a percentage. To select a sample with low outgassing, search for TML <= 1.0 percent.
- Collected Volatile Condensable Material (CVCM): The difference between the weight of a clean collector and of the collector having condensed materials will provide the mass of condensables To select a sample with low outgassing, search for CVCM <= 0.10 percent.
- Water Vapor Regained (WVR): This value is obtained as a percentage of the starting mass is that amount of water readsorbed/reabsorbed in 24 hours while the sample is exposed to 25° C, and 50-percent relative humidity. This determination is made after the vacuum test is completed and the values for TML and CVCM have been determined.
Low outgassing: Materials having a TML of 1.0 % or Less and a CVCM of 0.10 % or Less Low outgassing adhesives: http://web.archive.org/web/20090131151000/http://outgassing.nasa.gov:80/cgi/uncgi/sectionc/sectionc.sh Low outgassing tapes: http://web.archive.org/web/20090131151000/http://outgassing.nasa.gov:80/cgi/uncgi/sectionc/sectionc.sh Grease: vacuum grease (same as used in the microfab)
You can get chemical resistance from: http://www.plasticsintl.com/plastics_chemical_resistence_chart.html
Legend:
A = No Attack, possibly slight absorption. Negligible effect on mechanical properties. B = Slight attack by absorption. Some swelling and a small reduction in mechanical likely. C = Moderate attack of appreciable absorption. Material will have limited life. D = Material will decompose or dissolve in a short.
Aq. = Aqueous Solution CONC = Concentrated Aqueous Solution SAT = Saturated Aqueous Solution
- = No data available
Where Aqueous Solutions are Shown the concentration as a weight % is given.
Start your list of 3-D printing filaments here -- for any other information not taken from the sources above include your source in a single set of square brackts [].
- PLA, 185-205C, 0.56%TML 0.01 %CVCM 0.33%WVR, no chemical data other than MOST internal